General description npnpnp generalpurpose double transistors in an sot457 sc74 plastic package. B688 datasheet, b688 pdf, b688 data sheet, b688 manual, b688 pdf, b688, datenblatt, electronics b688, alldatasheet, free, datasheet, datasheets, data sheet. My electronics knowledge is getting better, i have been reading a lot, but i have lots of gaps and lack some basic knowledge, which im trying to pick up. Anyway, i understand the concept of a transistor, how it can be used for switching and i have. Please consult the most recently issued document before initiating or completing a design. Package dimensions pn2222 dimensions in millimeters 2018 semiconductor components industries, llc rev. B688 datasheet pdf b datasheet, b pdf, b data sheet, b manual, b pdf, b, datenblatt, electronics b, alldatasheet, free, datasheet, datasheets, data sheet. Aah 20080529 bc856bc857bc858 smd general purpose transistor pnp. B778 datasheet vcbo 120v, pnp transistor wing shing. When using the products referenced in this document, please make sure the product is being operated within the environmental and electrical limits specified in the datasheet.
Page 2 of 3 electrical characteristics t ambient25. The shown values and characteristics are not feasible to use for designin activities. Bc546b, bc547a, b, c, bc548b, c amplifier transistors. C unless noted otherwise off characteristics symbol description min. B688 datasheet pnp silicon power transistors mospec, 2sb688 datasheet, b688 pdf, b688 pinout, b688 equivalent, data, circuit, output, b688 schematic. Datasheet catalog for electronic components integrated. B688 datasheet, b688 pdf, b688 data sheet, b688 manual, b688 pdf, b688, datenblatt, electronics b688, alldatasheet, free, datasheet, datasheets, data sheet, datas. Bipolar transistor datasheet, bipolar transistor pdf, bipolar transistor data sheet, datasheet, data sheet, pdf. General purpose amplifier and switch description the 2n2102 is a silicon planar epitaxial npn transistor in jedec to39 metal case. Savantic semiconductor silicon pnp power transistors product specification 2sb688 description wit. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.
B778 datasheet vcbo 120v, pnp transistor wing shing, 2sb778 datasheet, b778 pdf, b778 pinout, b778 equivalent, circuit, b778 schematic, b778 manual. Datasheets 2sb1218a, 2sb709a, 2sb766a, 2sc2412k, 2sc4081. Zetex ztx549a silicon planar medium power transistor datasheet vceo 30v 1a continuous current ptot1 watt created date. The datasheet specifies a maximum continuous drain current id and a pulsed drain current id,pulse figure 3. On this datasheet of pn2222a bipolar transistor it is said that vcesat at icib10 is about 0,3volts. B absolute maximum ratings ta25 c,unless otherwise specified parameters symbol ratings units collectorbase voltage vcbo120 v collectoremitter voltage vceo120 v emitter base voltage vebo5 v collector current ic10 a. Transistor datasheet 15 browse through a total of 15 transistor datasheet. B688 silicon pnp power transistors components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits. Heterojunction bipolar transistor technology ingap hbt. Ktb688 transistor datasheet pdf, ktb688 equivalent.
The tip31a is a base island technology npn power transistor in to220 plastic package with better performances than the industry standard. Complementary to 2sd718 absolute maximum rating ta25cccc characteristic symbol rating unit collectorbase voltage collectoremitter voltage emitterbase voltage collector current dc collector dissipation. Marking of electronic components, smd codes br, br, br, br1, br, brd, brf, brn, bru, brz, br. Marking of electronic components, smd codes br, br, br. B688 datasheet pnp silicon power transistors mospec. May, 2016 b778 datasheet vcbo 120v, pnp transistor wing shing, 2sb778 datasheet, b778 pdf, b778 pinout, b778 equivalent, circuit, b778 schematic, b778 manual. Features and benefits reduces component count reduces pick and place costs aecq101 qualified 3.
B507 datasheet, b507 pdf, b507 data sheet, datasheet, data sheet, pdf. If customer usage exceeds the specified limits, kingbright will not be responsible for any subsequent issues. Bf182 datasheet, equivalent, cross reference search. Some part number from the same manufacture on semiconductor. D688 datasheet, d688 pdf, d688 data sheet, d688 manual, d688 pdf, d688, datenblatt, electronics d688, alldatasheet, free, datasheet, datasheets, data sheet, datas. It is intended for a wide variety of smallsignall and medium power applications in military and industrial equipments. Savantic, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. November 2001 ssw2n60b ssi2n60b 600v nchannel mosfet general description features these nchannel enhancement mode power field effect 2. Bc546b, bc547a, b, c, bc548b, c amplifier transistors npn silicon features pb.
Internal schematic diagram september 1997 3 2 1 sot32 absolute maximum ratings. Unit conditions vbrceo collectoremitter breakdown voltage 45 v ic10ma, b0 vbrcbo. However in the icollector vs vcesat graph for the same transistor that i will be posting immediately after i post this thread cause i cant add one more image here, it is shown that vce hardly even exceeds 0,2 volts at 500mamps. Ktb688 datasheet, equivalent, cross reference search. Npn datasheet, npn pdf, npn data sheet, npn manual, npn pdf, npn, datenblatt, electronics npn, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets. Bc817 16bc81725bc817 40 smd general purpose transistor npn.
The maximum continuous drain current depends on the maximum power dissipation chapter 3. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. Smd general purpose transistor npn bc81716bc81725bc81740. A1, february 2001 mje340 dimensions in millimeters 8. Internal schematic diagram september 1997 3 2 1 sot32. Heterojunction bipolar transistor technology ingap hbt broadband high linearity amplifier the mmg3006nt1 is a general purpose amplifier that is internally input prematched and designed for a broad range of class a, smallsignal, high linearity, general purpose applications. Npn silicon transistor sgsthomson preferred salestype npntransistor application generalpurposeswitching description the bd179 is a silicon epitaxial planar npn transistor in jedec sot32 plastic package, designed for medium power linear and switching applications.
Transistor datasheet, transistor pdf, transistor data sheet, datasheet, data sheet, pdf home all manufacturers by category part name, description or manufacturer contain. Toshiba transistor silicon pnp epitaxial type pct process. Thermal data rthjcase thermal resistance junctioncase max 1. General purpose transistors npn silicon maximum ratings rating symbol value unit collectoremitter voltage pn2222 pn2222a vceo 30 40 vdc collectorbase voltage pn2222 pn2222a vcbo 60 75 vdc emitterbase voltage pn2222 pn2222a vebo 5. Vbe decreases by about 2 mvk with increasing temperature. Vishay, disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. Anyway, i understand the concept of a transistor, how it can be used for switching and i. Page 2 of 5 electrical characteristics t ambient25. Free packages are available maximum ratings rating symbol value unit collector emitter voltage bc546 bc547 bc548 vceo 65 45 30 vdc collector base voltage bc546 bc547 bc548 vcbo 80 50 30 vdc emitter base voltage vebo 6. B absolute maximum ratings ta25 c,unless otherwise specified parameters symbol ratings units collectorbase voltage vcbo120 v collectoremitter voltage vceo120 v emitter base voltage vebo5 v collector current ic10 a base current ib1 a. Rating collector emitter voltage collector base voltage emitter base voltage collector current continuous total device dissipation 25c derate above 25c total device dissipation 25c derate above 25c operating and storage junction. Unit conditions vbrceo collectoremitter breakdown voltage 45 v ic10ma, b0.